| PART |
Description |
Maker |
| NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| STK4181V |
AF Power Amplifier (Split Power Supply) (45W 45W min, THD = 0.08%)
|
SANYO[Sanyo Semicon Device]
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| KB25MKG01B05BB KB25MKG01B12A KB25MKW01-05-A KB25MK |
0.4VA maximum 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A 20mV ~ 28V)
Miniature Pushbuttons
|
Nihon Kaiheiki Industry Co. Ltd.
|
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
|
